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机构地区:[1]School of Electrical Engineering,VIT University
出 处:《Journal of Semiconductors》2017年第10期79-83,共5页半导体学报(英文版)
摘 要:This paper proposes a repeater for boosting the speed of interconnects with low power dissipation.We have designed and implemented at 45 and 32 nm technology nodes.Delay and power dissipation performances are analyzed for various voltage levels at these technology nodes using Spice simulations.A significant reduction in delay and power dissipation are observed compared to a conventional repeater.The results show that the proposed high-speed low-power repeater has a reduced delay for higher load capacitance.The proposed repeater is also compared with LPTG CMOS repeater,and the results shows that the proposed repeater has reduced delay.The proposed repeater can be suitable for high-speed global interconnects and has the capacity to drive large loads.This paper proposes a repeater for boosting the speed of interconnects with low power dissipation.We have designed and implemented at 45 and 32 nm technology nodes.Delay and power dissipation performances are analyzed for various voltage levels at these technology nodes using Spice simulations.A significant reduction in delay and power dissipation are observed compared to a conventional repeater.The results show that the proposed high-speed low-power repeater has a reduced delay for higher load capacitance.The proposed repeater is also compared with LPTG CMOS repeater,and the results shows that the proposed repeater has reduced delay.The proposed repeater can be suitable for high-speed global interconnects and has the capacity to drive large loads.
关 键 词:REPEATER interconnects DELAY power dissipation charge pump
分 类 号:TN47[电子电信—微电子学与固体电子学]
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