分子束外延法制备ZnTe薄膜及ZnTe:O薄膜光学特性研究  

The Fabrication of ZnTe Thin Films by Molecular Beam Epitaxy and the Optical Properties of ZnTe:O Thin Films

作　　者：唐楠 任翱博 刘才[1] 李卫[1] 张静全[1] 武莉莉[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《西华师范大学学报（自然科学版）》2017年第3期323-326,共4页Journal of China West Normal University(Natural Sciences)

基　　金：国家高技术研发计划(2015AA050610);四川省科技支撑计划(2016GZX0272;2014GZ0159)

摘　　要：ZnTe:O高失配合金半导体是实现中间带太阳电池的有效途径,其制备通过如下几步实现:1)分子数外延(MBE)设备进行ZnTe单晶生长;2)将分子束外延制备的单晶ZnTe进行离子束注入;3)通过快速激光退火处理来实现ZnTe晶体质量的提升,修复晶格损伤。MBE所获得的最优晶体质量的条件是Zn源温控制在260℃,Te源温控制在290℃。掺杂O为1.25×1021cm-3时,所获得的中间带效果最好,并且在经过激光快速退火处理后,中间带的强度显著提升。ZnTe: O highly mismatched alloys is an effective way to achieve intermediate band solar cell. The fabrication of Zn Te: O is as follows:( a) the growth of Zn Te single crystal by molecular beam epitaxy;( b) the implantation of O ions to Zn Te;( c) the rapid annealing by pulsed laser to improve the quality of Zn Te single crystal and repair the crystal damage. The best condition to get Zn Te with high quality is to fix the temperature of Zn and Te at 260 ℃and 290 ℃,respectively. When the O concentration is 1. 25 × 1021cm-3,the intermediate band reaches its peak and its intensity is obviously enhanced after the pulsed laser annealing.

关 键 词：MBE 离子束注入 激光快速退火 ZnTe:O 光致发光特性 

分 类 号：O484.1[理学—固体物理]