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作 者:靳亚硕 郭向朝[1] 曹顿华 章汉梁 张国栋[1,2] 李海兵 Jin Yashuo Guo Xiangchao Cao Dunhua Zhang Hanliang Zhang Guodong Li Haibing(Research and Development Center for High Power Laser Components, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China University of Chinese Academy of Sciences, Beijing 100049, China Kunshan Kaiwei Electronic Co. , Ltd. , Suzhou, Jiangsu 215345, China Hangzhou North Car Depot, Shanghai Railway Bureau, Hangzhou, Zhejiang 311100, China)
机构地区:[1]中国科学院上海光学精密机械研究所高功率激光单元研发中心,上海201800 [2]中国科学院大学,北京100049 [3]昆山开威电子有限公司,江苏苏州215345 [4]上海铁路局杭州北车辆段,浙江杭州311100
出 处:《中国激光》2017年第10期83-90,共8页Chinese Journal of Lasers
摘 要:制备了不同Ce^(3+)掺杂浓度(摩尔分数)的钇铝石榴石(YAG)单晶和陶瓷,并对激光激发Ce:YAG单晶和陶瓷的光通量、光电转换效率、显色指数及色温进行了研究。在电流为2.6A的激光激发下,Ce^(3+)掺杂浓度为0.3%的陶瓷的光通量最高,为617.2lm;Ce^(3+)掺杂浓度为0.5%的单晶的显色指数较高,为62,色温为5841K。在功率为2.61 W、材料中心功率密度达10.8 W·mm-2的激光激发下,Ce:YAG单晶和陶瓷的光转换均未达到饱和,对应的光-光转换效率均约为240lm·W-1。实验结果表明,在高功率密度激光激发下,陶瓷和单晶均适用于产生高亮度白光。Yttrium aluminium garnet(YAG)single crystals and ceramics with different Ce^3+-doping concentrations(mole fraction)are prepared.The luminous flux,photoelectric conversion efficiency,color rendering index,and color temperature of Ce:YAG single crystals and ceramics under laser excitation are also analyzed.Under the excitation of the laser with a current of 2.6 A,the luminous flux of ceramics with a Ce^3+-doping concentration of0.3% is the highest at 617.2 lm.The single crystals with a Ce^3+-doping concentration of 0.5% have a high color rendering index of 62 and a color temperature of 5841 K.Under the excitation of the laser with a power of 2.61 W and a power density of 10.8 W·mm^-2 at the material center,the optical conversions of Ce:YAG single crystals and ceramics are both unsaturated and the corresponding optical-to-optical conversion efficiencies are both about240 lm·W^-1.The experimental results show that the ceramics and single crystals are suited to produce high brightness white light under high power density laser excitation.
关 键 词:材料 荧光材料 光通量 高功率密度激光 转换效率
分 类 号:TN27[电子电信—物理电子学]
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