激光脉冲串对电荷耦合器件积累损伤效应研究  

Damage accumulation effects of multiple laser pulses irradiated on charged coupled device

作　　者：邵俊峰[1] 郭劲[1] 王挺峰[1] 郑长彬[1] Shao Junfeng Guo Jin Wang Tingfeng Zheng Changbin(State Key Laboratory of Laser Interaction with Matter, Changchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences, Changchun 130033, China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所激光与物质相互作用国家重点实验室,吉林长春130033

出　　处：《红外与激光工程》2017年第10期6-11,共6页Infrared and Laser Engineering

基　　金：激光与物质相互作用国家重点实验室自主基金课题(SKLLIM-1503);光电对抗测试评估技术重点实验室开放课题(GKCP2016004)

摘　　要：为了研究激光脉冲串对光电系统的损伤和致盲机理,开展了重频纳秒激光对黑白行间转移相机电荷耦合器件的损伤实验研究。实验结果表明:存在两种积累损伤效应机理,多个脉冲到达CCD靶面同一位置的损伤或致盲具有积累效应,多个脉冲积累损伤能够显著降低线损伤和全靶面损伤阈值,降低程度与脉冲个数、激光到靶能量密度有关。致盲机理与单脉冲致盲机理相同,均表现为器件垂直转移电路间及地间的短路;而激光脉冲串到达CCD靶面的不同位置也能够实现器件的功能性失效,其机制与单脉冲损伤显著不同,仅表现为线损伤的叠加,并未造成器件电路紊乱,功能性损伤阈值即对应线损伤阈值660 mJ/cm^2,而小于单次致盲阈值1 500~2 200 mJ/cm^2。Experimental research on pulsed nanosecond laser irradiation on Charged Coupled Devie was carried out to understand the damage and blindness mechanism of multiple pulses interaction with EO systems. The results showed two distinctive damage effects and mechanisms. It exhibited damage and blindness accumulation effects and damage threshold reducing outcomes with multiple pulses arriving at the same spot on CCD, including point-to-line damage and line-to-full frame blindness. The threshold reducing outcomes is closely related with pulse number and laser fluence with the same mechanism as single short blindness. However, the damage mechanism for multiple-pulse damage to different pixels is obviously different, which attributes to a multiple vertical line damage superposed effect without electrical disorder. The functional blindness threshold is indentified with line damage threshold 660 mJ/cm^2, and evidently less than that of single-pulse blindness threshold 1 500-2 200 mJ/cm^2.

关 键 词：脉冲激光 损伤机理 电荷耦合器件 功能性失效 

分 类 号：TN249[电子电信—物理电子学]