Analysis of 3D NAND technologies and comparison between charge-trap-based and floating-gate-based flash devices  

作　　者：Liu Shijun Zou Xuecheng 

机构地区：[1]School of Optics and Electronic Information,Huazhong University of Science and Technology

出　　处：《The Journal of China Universities of Posts and Telecommunications》2017年第3期75-82,96,共9页中国邮电高校学报（英文版）

摘　　要：NAND flash chips have been innovated from two-dimension （2D） design which is based on planar NAND cells to three-dimension （3D） design which is based on vertical NAND cells. Two types of NAND flash technologies-charge-trap （CT） and floating-gate （FG） are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.NAND flash chips have been innovated from two-dimension （2D） design which is based on planar NAND cells to three-dimension （3D） design which is based on vertical NAND cells. Two types of NAND flash technologies-charge-trap （CT） and floating-gate （FG） are presented in this paper to introduce NAND flash designs in detail. The physical characteristics of CT-based and FG-based 3D NAND flashes are analyzed. Moreover, the advantages and disadvantages of these two technologies in architecture, manufacture, interference and reliability are studied and compared.

关 键 词：3D NAND flash charge trap floating gate 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] TH122[自动化与计算机技术—计算机科学与技术]