掺杂对Al_2O_3陶瓷微波介电损耗影响的研究进展  

Research Progress of Impact of Doping on Microwave Dielectric Loss of Al_2O_3 Ceramics

作　　者：张康 李蔚[3] 贾立颖 朱代漫 胡国辉 熊君 揣丹 高俊彦[2] 王倩[2] 刘荣明 李炳山[1,2] ZHANG Kang LI Wei JIA Liying ZHU Daiman HU Guohui XIONG Jun CHUAI Dan GAO Junyan WANG Qian LIU Rongming LI Bingshan(BGRIMM Magnetic Materials ＆ Technology （Fuyang） Co. Ltd. Fuyang 236000 China School of Materials Science and Engineering East China University of Science and Technology, Shanghai 200237, China National Engineering Research Center for Magnetic Materials, Beijmg 102600, China)

机构地区：[1]北矿磁材(阜阳)有限公司,阜阳236000 [2]国家磁性材料工程技术研究中心,北京102600 [3]华东理工大学材料科学与工程学院,上海200237

出　　处：《中国陶瓷》2017年第10期1-6,共6页China Ceramics

基　　金：国家自然科学基金资助项目(51401023);北京矿冶研究总院重大研发计划项目(YJZ-2015-03);北京市丰台区科技三项费项目(KSF201709)

摘　　要：综述了掺杂对Al_2O_3陶瓷微波介电损耗影响的研究进展,概括介绍了Al_2O_3陶瓷微波介电损耗的影响因素,重点介绍了不同价态的掺杂助剂对Al_2O_3陶瓷微波介电损耗的影响,最后对这一研究方向的未来发展做了一些展望,希望对于研究改善Al_2O_3陶瓷微波介电损耗提供有益的参考。This article reviewed the research progress of the impact of doping on the microwave dielectric loss of Al_2O_3 ceramics,generalized the impact factors of the microwave dielectric loss of Al_2O_3 ceramics,focused on the influence of dopants with different valence states on the microwave dielectric loss of Al_2O_3 ceramics.In the final of the article some expectations on the future development were proposed,which can provide some profitable references for improving the microwave dielectric loss of Al_2O_3 ceramics.

关 键 词：氧化铝 微波介电性能 掺杂 

分 类 号：TQ174[化学工程—陶瓷工业]