热退火条件下球状纳米硅晶粒成核势垒阈值研究  

Threshold of nucleation barrier of spherical Si nanoparticle prepared by heat annealing

作　　者：邓泽超[1] 付念[1] 褚立志[1] 丁学成[1] 傅广生[1] 王英龙[1] DENG Zechao FU Nian CHU Lizhi DING Xuecheng FU Guangsheng WANG Yinglong(Key Laboratory of Photo-Electronics Information Materials of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, China)

机构地区：[1]河北大学物理科学与技术学院,河北省光电信息材料重点实验室,河北保定071002

出　　处：《河北大学学报（自然科学版）》2017年第5期471-475,共5页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目(A2015201166;E2017201209);河北省研究生创新资助项目(CXZZBS2017024);河北省高等学校科学技术研究青年基金项目(QN2017017)

摘　　要：利用纳秒脉冲激光烧蚀(PLA)技术,在室温、真空环境中沉积制备了非晶Si薄膜,并通过热退火实现了薄膜样品的晶化.利用扫描电子显微镜(SEM)、X线衍射(XRD)仪和Raman散射(Raman)仪等技术对退火后的样品进行形貌表征和晶态成分分析,确定了非晶Si薄膜晶化的热退火阈值温度以及在该条件下所形成球状纳米Si晶粒的平均直径,结果分别为850℃和15nm.假定纳米Si晶粒为理想球体,结合固相晶化过程中的能量变化,计算得到了晶化形成直径15nm球状晶粒所需要的能量,即成核势垒阈值,量级约为10-11 mJ.Amorphous Si films were prepared by pulsed laser ablation in vacuum at room temperature.These samples were heated by annealing furnace in order to transform into crystalline film.Threshold of nucleation barrier and mean diameter of Si nanoparticle were determined through the results of SEM,Raman and XRD,which were 850 ℃ and 15 nm,respectively.If the shape of nanoparticle is assumed to be ideal sphere,we can obtain the magnitude of threshold nucleation barrier for the nanoparticle through calculation,which is in the order of 10^（-11） mJ.

关 键 词：脉冲激光烧蚀 热退火 纳米晶粒 成核势垒 

分 类 号：TN304[电子电信—物理电子学]