多胞MOSFET器件的射频建模和参数提取（英文）  

Radio-Frequency modeling and parameters extraction of multi-cell MOSFET device

作　　者：周影 于盼盼 高建军 

机构地区：[1]华东师范大学信息科学技术学院电子工程系,上海200062

出　　处：《红外与毫米波学报》2017年第5期550-553,562,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Natural Science Foundation of China(61474044)

摘　　要：对纳米级金属氧化物半导体场效应管器件提出了改进的小信号模型.该改进模型中综合考虑了馈线的趋肤效应和器件多胞结构的影响.提取过程中,根据可缩放规律,由传统模型的参数推导出元胞参数.将模型应用于8×0.6×12μm(栅指数×栅宽×元胞数量)、栅长为90 nm的MOSFET器件在1~40 GHz范围内的建模,测试所得S参数和模型仿真所得S参数能够高度地吻合.An improved small-signal model for nanometer metal-oxide-semiconductor field-effect transistor（ MOSFET） device is presented in this paper. The skin effect and multiple-cell effect are both taken into account. In the extracting procedure,the parameters of elementary cells are determined from the conventional model based on the scalable rules. This small-signal model was validated by the good agreement between measured and simulated S-parameters of 8 × 0. 6 × 12 μm（ number of gate fingers × unit gatewidth × cells） 90-nm gatelength MOSFET under three bias points up to 40 GHz.

关 键 词：半导体技术 小信号模型 模型参数提取 趋肤效应 多胞模型 

分 类 号：TN380.1[电子电信—物理电子学]