基于硅透镜集成的高灵敏度室温太赫兹探测器  

High Sensitivity Room Temperature Terahertz Detector Based on Silicon Lens Integration

作　　者：孙云飞[1] 孙建东[2] 秦华[2] 班建民[1] 罗恒[1] 陶重犇[1] 胡伏原[1] 田学农 Sun Yunfei Sun Jiandong Qin Hua Ban Jianmin Luo Heng Tao Chongben Hu Fuyuan Tian Xuenong(School of Electronic ~- Information Engineering, Suzhou University of Sciences and Technology Suzhou 215009, China Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano- Tech and Nano-Bionics , Chinese Academy of Sciences, Suzhou 215123, China)

机构地区：[1]苏州科技大学电子与信息工程学院,江苏苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《微纳电子技术》2017年第11期729-733,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61401297;61401456);江苏省自然科学基金资助项目(BK20140283);中国科学院纳米器件与应用重点实验室开放课题资助项目(14ZS05)

摘　　要：提出了一种基于硅透镜集成的高灵敏度GaN/AlGaN高电子迁移率晶体管(HEMT)的太赫兹模组探测器。在太赫兹波辐照下,超半球硅透镜可以有效提高太赫兹波收集效率和消除被测器件的衬底干涉效应,进而提高探测器的灵敏度。对集成有直径为6 mm超半球硅透镜的太赫兹探测器件进行了仿真和测试。研究发现在频率为600和900 GHz的太赫兹波辐照下,硅透镜中心区域的太赫兹电场分别增加到原来的5.9倍和6.8倍。在300 K下器件的响应度和噪声等效功率分别为4.5 kV/W和30 pW/Hz0.5,在77 K下器件的响应度达到100 kV/W,噪声等效功率降至1 pW/Hz0.5。A high sensitivity GaN/A1GaN high electron mobility transistor （HEMT） terahertz module detector based on the silicon lens integration was proposed. Under terahertz wave irradia- tion, the terahertz wave collection efficiency was improved effectively and the substrate interfe- rence effect of the measured device was eliminated effectively by the ultra-hemispherical silicon lens, then the sensitivity of the detector was improved. The simulation and test of the terahertz detector integrated ultra-hemispherical silicon lens with a diameter of 6 mm were carried out. The research result shows that under terahertz wave irradiation with two frequencies of 600 and 900 GHz, the electric field of the silicon lens central area increase by 5.9 times and 6.8 times, respectively. The responsivity and 30 pW/Hz^0.5 respectively at 300 K. noise equivalent power decrease to 1 noise equivalent power of the device The responsivity of the device reaches pW/Hz^0.5 at 77 K. are 4. 5 kV/W and 100 kV/W and the noise equivalent power decrease to 1 pW/Hz^0.5 at 77 K.

关 键 词：探测器 太赫兹 高电子迁移率晶体管(HEMT) 硅透镜 灵敏度 

分 类 号：TL814[核科学技术—核技术及应用] TN386.3[电子电信—物理电子学]