半导体器件用陶瓷基片材料发展现状  

Development of Ceramic Substrate Materials for Semiconductor Devices

作　　者：张伟儒[1] 郑彧[1] 李正 高崇[1] 童亚琦 

机构地区：[1]北京中材人工晶体研究院有限公司,北京100018

出　　处：《真空电子技术》2017年第5期20-23,共4页Vacuum Electronics

基　　金：北京市科技计划课题(Z171100002017015)

摘　　要：陶瓷材料具有优异的力学强度,并具有高熔点、高硬度、高耐磨性、耐氧化等优点,是半导体器件,特别是大功率半导体器件绝缘基片的重要材料。随着半导体器件向大功率化、高频化的不断发展,对陶瓷绝缘基片的导热性和力学性能都提出了更高的要求。本文在半导体器件对基片材料性能要求的基础上,介绍了目前常用的氧化铍、氧化铝和氮化铝的性能及应用前景。阐述了新型陶瓷基板材料氮化硅陶瓷的物理力学性能,并与氧化铝和氮化铝的性能进行了比较,分析了氮化硅陶瓷基片在半导体器件上的应用优势,并对其未来前景进行了展望。Ceramic materials are important substrate materials for semiconductor devices because of their excellent mechanical strength,high melting point,high hardness,high wear resistance and oxidation resistance.This paper introduces the performance and application of some commonly used ceramics such as beryllium oxide,alumina and aluminum nitride.The paper also describes the physical and mechanical properties of silicon nitride ceramic as a new kind of ceramic substrate material.The advantages of silicon nitride ceramic substrate on semiconductor devices are analyzed and its application prospects are also looked forward.

关 键 词：半导体 陶瓷绝缘基板 氮化硅陶瓷 热导率 

分 类 号：TN304[电子电信—物理电子学]