AlN基衰减瓷的制备工艺及其性能研究  

Study on Preparation and Characteristics of AlN Based Absorbing Ceramics

作　　者：陈昀 梁田 杨磊 刘洋 任重 

机构地区：[1]南京三乐集团有限公司,江苏南京211800

出　　处：《真空电子技术》2017年第5期24-26,共3页Vacuum Electronics

摘　　要：采用热压烧结工艺,通过实验确定了烧结温度和压力,制备出AlN基衰减瓷。对材料的物理性能进行测试,热导率大于50 W/mK,抗折强度大于360 MPa。同时从工程化应用的角度出发,对衰减瓷的匹配特性和衰减量进行了测试,驻波比小于1.2,隔离度小于-70dB。The sintering temperature and pressure of hot-pressing process is determined by experiment,and AlN based absorbing ceramics is made.The thermal conductivity of the AlN ceramic is greater than 50W/mK and the flexural strength is greater than 360 MPa.Aiming to engineering application,the matching characteristics and attenuation were tested,the SWR is less than 1.2 and the isolation is less than-70 dB.

关 键 词：AlN基衰减瓷 制备工艺 性能测试 

分 类 号：TQ174.5[化学工程—陶瓷工业]