Optimization of SnS active layer thickness for solar cell application  

作　　者：Yashika Gupta P.Arun 

机构地区：[1]Department of Electronic Science, University of Delhi-South Campus, Benito Juarez Marg, Delhi 110021, India [2]Material Science Research Lab, S.G.T.B. Khalsa College, University of Delhi, Delhi 110007, India

出　　处：《Journal of Semiconductors》2017年第11期15-21,共7页半导体学报（英文版）

基　　金：DST(India) for the financial assistance in terms of fellowship under the INSPIRE program(Fellowship No.IF131164)

摘　　要：This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same（113） orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current＇s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility（both hole and electron） showing an increasing trend with film thickness. The optimum absorber layer thickness for both p-and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.This work presents a comparative study of n-SnS and p-SnS active layers for increased solar cell efficiency. Tin sulphide thin films of various thicknesses having p-type and n-type conductivity were fabricated by thermal evaporation. Both type of films had the same（113） orientation of the crystal planes with a constant tensile strain of ~ 0.003 and ~ 0.011, respectively. The persistent photocurrent was observed in all n-SnS and p-SnS samples with the current＇s time decay constant decreasing with increasing film thickness. Hole mobility of thicker p-SnS films was found to be greater than the electron mobility in n-SnS samples, with mobility（both hole and electron） showing an increasing trend with film thickness. The optimum absorber layer thickness for both p-and n-SnS layers should have a high value of diffusion length for a given absorption coefficient and band-gap.

关 键 词：thin film chalcogenides optical properties 

分 类 号：TM914.4[电气工程—电力电子与电力传动]