The effect of AlN/AlGaN superlattices on crystal and optical properties of AlGaN epitaxial layers  

作　　者：Shuo Zhang Yun Zhang Xiang Chen Yanan Guo Jianchang Yan Junxi Wang Jinmin Li 

机构地区：[1]Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]University of Chinese Academy of Sciences, Beijing 100049, China [3]Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083, China [4]State Key Laboratory of Solid State Lighting, Beijing 100083, China

出　　处：《Journal of Semiconductors》2017年第11期22-25,共4页半导体学报（英文版）

基　　金：Project supported in part by the National High Technology Program of China(No.2014AA032608);the National Key R&D Program of China(Nos.2016YFB0400800,2016YFB0400083,2016YFB0400082);in part by the National Natural Sciences Foundation of China(Nos.6136047,61206090,61527814,61674147,61204053);the Beijing Municipal Science and Technology Project(No.D161100002516002);the National 1000 Young Talents Program;the Youth Innovation Promotion Association,CAS

摘　　要：We investigate the effect of AlN/AlGaN superlattices（SLs） on crystal and optical properties of AlGN epitaxial layers. The result indicates that the crystal quality of AlGaN layers is consistent within a wide range of SLs thicknesses, while the optical properties are opposite. With SLs thickness decreasing from 20/44 to 17/36 and 15/29 nm, the full-width at half maximum of X-ray rocking curves for （0002）- and（1012）-plane of n-AlGaN layers grown on SLs are consistent of around 250 arcsec and 700 arcsec, respectively. Meanwhile, the center of the low optical transmittance band decreases from 326 to 279 nm and less than 266 nm as the SLs thickness decreases.280 nm deep ultraviolet light-emitting diodes（DUV-LEDs） structures are further regrown on the n-AlGaN layers.The electroluminescent intensities of samples are 30% higher than that of the sample whose low optical transmittance band appears around 279 nm. Optical simulations reveal that the SLs acts as distributed Bragg reflectors, thus less photons of the corresponding wavelength escape from the sapphire backside.We investigate the effect of AlN/AlGaN superlattices（SLs） on crystal and optical properties of AlGN epitaxial layers. The result indicates that the crystal quality of AlGaN layers is consistent within a wide range of SLs thicknesses, while the optical properties are opposite. With SLs thickness decreasing from 20/44 to 17/36 and 15/29 nm, the full-width at half maximum of X-ray rocking curves for （0002）- and（1012）-plane of n-AlGaN layers grown on SLs are consistent of around 250 arcsec and 700 arcsec, respectively. Meanwhile, the center of the low optical transmittance band decreases from 326 to 279 nm and less than 266 nm as the SLs thickness decreases.280 nm deep ultraviolet light-emitting diodes（DUV-LEDs） structures are further regrown on the n-AlGaN layers.The electroluminescent intensities of samples are 30% higher than that of the sample whose low optical transmittance band appears around 279 nm. Optical simulations reveal that the SLs acts as distributed Bragg reflectors, thus less photons of the corresponding wavelength escape from the sapphire backside.

关 键 词：AlN AlGaN superlattices crystal quality transmittance light-emitting diodes 

分 类 号：TN304[电子电信—物理电子学] TN312.8