Performance improvement of c-Si solar cell by a combination of SiNx/SiOx passivation and double P-diffusion gettering treatment  

作　　者：Xiaoyu Chen Youwen Zhao Zhiyuan Dong Guiying Shen Yongbiao Bai Jingming Liu Hui Xie Jiangbian He 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China [2]College of Materials Science and Opto-Electronic Technology, Univeristy of Chinese Academy of Sciences, Beijing 100049, China [3]Solar Energy Technology Co., Ltd., Hohhot 010010, China

出　　处：《Journal of Semiconductors》2017年第11期60-65,共6页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61474104,61504131)

摘　　要：SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect, SiNx/SiOx layer has lower reflectivity in long wavelength range than conventional SiNx film. As a consequence, such solar cells exhibit higher conversion efficiency and better internal quantum efficiency, compared with conventional c-Si solar cells.SiNx/SiOx passivation and double side P-diffusion gettering treatment have been used for the fabrication of c-Si solar cells. The solar cells fabricated have high open circuit voltage and short circuit current after the double P-diffusion treatment. In addition to better surface passivation effect, SiNx/SiOx layer has lower reflectivity in long wavelength range than conventional SiNx film. As a consequence, such solar cells exhibit higher conversion efficiency and better internal quantum efficiency, compared with conventional c-Si solar cells.

关 键 词：c-Si solar cell double diffusion SiNx/SiOx passivation 

分 类 号：TM914.4[电气工程—电力电子与电力传动]