Influence of band gap of p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density in thin-film silicon solar cells  

作　　者：Shuwei Zhang Xiangbo Zeng 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2017年第11期76-80,共5页半导体学报（英文版）

基　　金：Project partly supported by the National High Technology Research and Development Program of China(No.2011AA050504)

摘　　要：The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.The impact of the optical band gap（Eg） of a p-type hydrogenated nanocrystalline silicon layer on the short-circuit current density（Jsc） of a thin-film silicon solar cell is assessed. We have found that the Jsc reaches maximum when the Eg reaches optimum. The reason for the Jsc on Eg needs to be clarified. Our results exhibit that maximum Jsc is the balance between dark current and photocurrent. We show here that this dark current results from the density of defects in the p-layer and the barrier at the interface between p-and i-layers. An optimum cell can be designed by optimizing the p-layer via reducing the density of defects in the p-layer and the barrier at the p/i interface. Finally, a 6.6% increase in Jsc was obtained at optimum Eg for n-i-p solar cells.

关 键 词：nanocrystalline silicon band gap p-layer short-circuit current density solar cells 

分 类 号：TM914.4[电气工程—电力电子与电力传动]