Effect of annealing temperature on Ti/Al/Ni/Au ohmic contacts on undoped AlN films  

作　　者：Xuewei Li Jicai Zhang Maosong Sun Binbin Ye Jun Huang Zhenyi Xu Wenxiu Dong Jianfeng Wang Ke Xu 

机构地区：[1]Platform for Characterization and Test, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China [2]Suzhou Nanowin Science and Technology Co., Ltd, Suzhou 215123, China [3]University of Chinese Academy of Sciences, Beijing 100049, China

出　　处：《Journal of Semiconductors》2017年第11期109-112,共4页半导体学报（英文版）

摘　　要：The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950 ℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm^2 was obtained for the sample annealed at 950 ℃. In this work, we confirmed that the formation mechanism of ohmic contacts on Al N was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au2Ti and AlAu2 alloys. This result provided a possibility for the preparation of Al N-based high-frequency, high-power devices and deep ultraviolet devices.The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950 ℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm^2 was obtained for the sample annealed at 950 ℃. In this work, we confirmed that the formation mechanism of ohmic contacts on Al N was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au2Ti and AlAu2 alloys. This result provided a possibility for the preparation of Al N-based high-frequency, high-power devices and deep ultraviolet devices.

关 键 词：ohmic contacts AlN annealing temperature Ti/Al/Ni/Au 

分 类 号：TN304.2[电子电信—物理电子学]