石墨烯-硅基混合光子集成电路  

Graphene-silicon hybrid photonic integrated circuits

作　　者：肖廷辉 于洋 李志远 

机构地区：[1]中国科学院物理研究所光物理实验室,北京100190 [2]中国科学院大学,北京100049 [3]华南理工大学物理与光电学院,广州510640

出　　处：《物理学报》2017年第21期145-156,共12页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2013CB632704);国家自然科学基金(批准号:11434017)资助的课题~~

摘　　要：近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.Silicon photonics is considered as a promising technology to realize high-performance photonic integrated circuits,owing to its complementary metal oxide semiconductor-compatibility which is applicable for large-scale integration at low cost. However, due to the limitation of optoelectronic properties of silicon, the challenge to the realization of highperformance active device on the silicon integrated platform still exists. The recent development of graphene-silicon hybrid photonic integrated circuit provides a practical solution to this problem, because graphene, as a superior twodimensional material, possesses many advantageous optoelectronic properties, such as high mobility, high electro-optical coefficient, and broadband absorption, which can be fully exploited to break through the material limitation of silicon.Moreover, compared with other active integrated materials such as germanium and compound semiconductors, graphene is cost-effective and can be conveniently integrated with silicon photonic device. Here, we review some important research progress of graphene-silicon hybrid photonic integrated circuits that include optical sources, optical waveguides, optical modulators, and photodetectors. The challenges and prospects of these devices are also analyzed, which are expected to be beneficial to the relevant research communities.

关 键 词：硅基光子学 石墨烯光子学 集成光子学 

分 类 号：TN491[电子电信—微电子学与固体电子学]