高压下碳纳米管阵列与金属接触热阻研究  

Study of thermal contact resistance between CNT array and metal under high pressure

作　　者：黄正兴 王志刚 张鑫 

机构地区：[1]大连理工大学电子信息与电气工程学部,辽宁大连116024

出　　处：《大连理工大学学报》2017年第6期638-643,共6页Journal of Dalian University of Technology

基　　金：国家自然科学基金资助项目(61131004);辽宁省自然科学基金资助项目(201602153)

摘　　要：碳纳米管具有很高的轴向热导率,近年来基于碳纳米管阵列的热界面材料得到了广泛的关注.但碳纳米管阵列与金属间的接触热阻较大,通常在10mm^2·K/W以上,限制了其实际应用.目前通过化学成键等方法可将其界面热阻降至0.6mm^2·K/W,但这些方法都需要牺牲碳纳米管耐高温的特点.为保证其耐高温特性,通过施加压力的方法降低了碳纳米管阵列与金属间的接触热阻.对于高度为800μm的碳纳米管阵列,当压力为1.49 MPa时,测量得到的碳纳米管阵列-Au界面接触热阻为1.90~3.51mm^2·K/W,接近化学成键法的结果并且远小于小压力作用下的热阻,这一结果为进一步减小碳纳米管的接触热阻提供了新的思路.Due to its high axial thermal conductivity,carbon nanotube(CNT)array based thermal interface material has attracted much attention in recent years.However,the large thermal contact resistance between CNT array and metal,usually more than 10 mm^2·K/W,is a bottleneck for its practical application.At present,by chemical bonding and other methods,a small value as 0.6 mm^2·K/W has been obtained,but these methods need to sacrifice high temperature characteristics of CNT.To solve this problem,the thermal contact resistance between CNT array and metal is reduced by using pressure.For CNT array with a height of 800μm,thermal contact resistance between CNT array and Au is measured with a value between 1.90 and 3.51 mm^2·K/W,under a relative high pressure of 1.49 MPa,which is closed to the result of chemical bonding method and far less than thermal resistance under a small pressure.It provides a new way to further reduce the thermal contact resistance of CNT.

关 键 词：热界面材料 碳纳米管阵列 接触热阻 瞬态热反射测试 

分 类 号：TK124[动力工程及工程热物理—工程热物理]