宽调谐外腔式1.53μm近红外半导体激光器研究  

Widely Tunable External Cavity Near-infrared Semiconductor Laser at 1.53μm

作　　者：高志强 黄彦 张宇露 李艳华[2] 彭泳卿 Gao Zhiqiang;Huang Yan;Zhang Yulu;Li Yanhua;Peng Yongqing(Beijing Research Institute of Telemetry, Beijing 100076, China;China Academy of Aerospace Electronics Technology, Beijing 100094, China)

机构地区：[1]北京遥测技术研究所,北京100076 [2]中国航天电子技术研究院,北京100094

出　　处：《遥测遥控》2017年第5期55-61,共7页Journal of Telemetry,Tracking and Command

基　　金：首都科技条件平台与科技创新劵(Z161100003016014);中国科技部国家国际科技合作专项(2013DFA20600)

摘　　要：采用闪耀光栅作为模式选择元件研制1.53μm外腔式半导体激光器,研究光栅衍射角、温度、电流对激光器输出特性的影响和P-I特性。利用单角度面SAF(Single-Angle-Facet)型芯片、改进型Littrow外腔结构实现了激光器宽调谐、单纵模激光输出,连续运转模式下最大调谐范围132nm(479cm^(–1)),最高输出功率60m W;脉冲运转模式下(占空比50%)最大调谐范围126nm(533cm^(–1)),最高输出功率26.8m W;连续模式下获得最窄线宽25pm。A blazed grating is taken as the mode selected component, and a semiconductor laser with external cavity in Littrow configuration at 1.53μm is achieved. This paper studies the output characteristics of the external cavity semiconductor laser at different grating diffraction angles, temperature and drive current, and the power–current characteristics at different wavelengths. It is found that the tunable laser realizes broad tuning range and single-mode output with SAF chip and improved Littrow configuration. Test results show that the laser has a wide single-mode tuning range of 132nm（479cm-1） and output power of 60mW in continuous-wave（CW） mode, together with a wide tuning range of 126nm（533cm-1） and output power of 26.8mW with duty cycle of 50% in pulse mode. Its spectral line width is compressed to 25pm in continuous-wave（CW） mode.

关 键 词：闪耀光栅 外腔式半导体激光器 SAF型芯片 宽调谐 

分 类 号：TN248.4[电子电信—物理电子学]