溅射靶功率对W-C:H薄膜结构与摩擦学性能的影响  被引量:1

Effect of Sputtering Target Power on Structure and Tribological Properties of W-C:H Films

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作  者:孙尚琪 刘翔[1] 王永欣 李金龙 王立平 

机构地区:[1]昆明理工大学材料科学与工程学院,昆明650093 [2]中国科学院宁波材料技术与工程研究所中国科学院海洋新材料与应用技术重点实验室浙江省海洋材料与防护技术重点实验室,浙江宁波315201

出  处:《表面技术》2017年第11期104-109,共6页Surface Technology

基  金:中国科学院战略性先导科技专项(A类)资助(XDA13040602);国家自然科学基金(51475449);国家973计划项目子课题(2014CB643302);宁波市工业重大科技专项(201701ZD-A01099)~~

摘  要:目的研究不同溅射功率对W-C:H涂层结构与摩擦学性能的影响。方法用非平衡磁控溅射(UBMS)+等离子体增强化学气相沉积法(PECVD),以WC靶作为溅射靶,C2H2为反应气体,通过调制溅射靶功率,在316不锈钢与Si(100)基体上制备了W-C:H系列薄膜。通过场发射电镜(FESEM)、X射线衍射仪(XRD)、拉曼光谱对薄膜的微观结构和成分进行了表征。用UMT-3MT多功能摩擦机对薄膜的摩擦学性能进行了分析。结果 W-C主要以β-WC1-x纳米晶的形式均匀分布在非晶碳中,并表现出(200)面择优生长。随着溅射靶功率的上升,薄膜内W含量逐渐升高,(200)面衍射峰逐渐增强,sp2含量先降低后升高。靶功率在1.4 k W时具有较好的摩擦学性能,摩擦系数为0.15,磨损率为3.92×10-7 mm^3/(N·m)。结论随着溅射靶功率逐渐升高,柱状晶逐渐变粗,涂层的致密性逐渐降低,薄膜摩擦学性能与WC含量密切相关。The work aims to research effects of different sputtering target power on structure and tribological properties of W-C:H films. With WC target as sputtering target and C2H2 as reaction gas, a series of W-C:H films were prepared on 316 stainless steel and Si(100) substrates by modulating sputtering target power. Microstructure and composition of the films were characterized with FESEM, XRD and Raman spectrum. Tribological properties of the films were analyzed with UMT-3 MT multi-function friction machine. W-C was mainly distributed in amorphous carbon in the form of β-WC1-x nanocrystals, and it grew preferentially along(200) crystal face. W content in the film gradually increased as the sputtering power increased, diffraction peak of(200) face gradually increased, and sp2 content first decreased and then increased. The target power exhibited good tribological properties at 1.4 kW, friction coefficient was 0.15 and wear rate is 3.92×10-7 mm3/(N·m). As the sputtering target power gradually increases, the columnar crystals become thicker and the coating density decreases gradually. Tribological properties of the films are closely related to WC content.

关 键 词:W-C:H薄膜 溅射靶功率 结构 摩擦系数 磨损率 韧性 

分 类 号:TG174.45[金属学及工艺—金属表面处理]

 

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