背表面场结构参数对双面太阳电池电流特性的影响  

Influences on bifacial solar cells current property by back surface field structural parameters

作　　者：周涛 陆晓东 吴元庆 李媛 

机构地区：[1]渤海大学新能源学院,辽宁锦州121000

出　　处：《电子元件与材料》2017年第12期89-94,共6页Electronic Components And Materials

基　　金：国家自然科学基金项目(No.11304020)

摘　　要：针对正面光照、背面光照及双面光照三种不同光照条件,利用TCAD半导体器件仿真软件全面系统地分析了背表面场结构参数对P型双面单晶硅太阳电池内量子效率(IQE)和短路电流密度(JSC)的影响。仿真结果表明:在300~700 nm短波段范围,双面光照情况下的IQE主要由BSF结构对背面光照光生载流子的影响决定。在700~1200 nm长波段范围,双面光照情况下的IQE主要由BSF结构对正面光照光生载流子的影响决定。当BSF扩散深度一定时,随着BSF表面浓度的增大,双面光照情况下JSC的变化特点与背面光照情况一致。BSF结构的变化对正面光照情况下JSC的影响较小((35)JSC=0.26×10^(–3)A/cm^2),而BSF结构参数的变化对背面光照情况下JSC的影响较大((35)JSC=10.59×10^(–3)A/cm^2),BSF结构对背面光照光生载流子的影响是导致双面光照JSC出现大幅变化的主要因素。The influences of back surface field structural parameters on P-type bifacial monocrystalline silicon solar cell’s internal quantum efficiency （IQE） and short-circuit current density （JSC） were studied comprehensively and systematically by using TCAD semiconductor device simulation software under three different illumination conditions of front illumination, rear illumination and double illumination. The simulation results show that the internal quantum efficiency under double illumination conditions is mainly determined by the influences of back surface field structure on the photo-carrier produced by rear illumination excitation in the short wave range of 300-700 nm. The internal quantum efficiency under double illumination conditions is mainly determined by the influences of back surface field structure on the photo-carrier produced by front illumination excitation in the long wave range of 700-1200 nm. When the value of diffusion depth of BSF is fixed, the characteristic of change of the short-circuit current density under double illumination conditions is consistent with that under the rear illumination with the increase of BSF surface concentration. The change of back surface field structure has less effect on the short-circuit current density under front illumination （△JSC = 0.26×10^–3A/cm^2）, and the change of back surface field structure has greater effect on the short-circuit current density under rear illumination （△JSC=10.59×10^–3A/cm^2）. The influence of back surface field structure on the photo-carrier produced by rear illumination excitation is the main influential factor of the serious fluctuation in the short-circuit current density.

关 键 词：双面太阳电池 背表面场 表面浓度 扩散深度 内量子效率 短路电流密度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]