提拉法生长超宽禁带半导体β-Ga2O3单晶的研究  

Study on Growth of Ultra-wide Bandgap Semiconductor β-Ga_2O_3 Single Crystal by Czochralski Method

作　　者：赵绪尧 孙敦陆 张会丽 方忠庆 权聪 程毛杰 

机构地区：[1]中国科学院安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,安徽合肥230031 [2]中国科学技术大学,安徽合肥230026

出　　处：《中国照明电器》2017年第10期10-12,共3页China Light & Lighting

基　　金：国家重点研发计划(2016YFB1102301);电子工程学院脉冲功率激光技术重点实验室开放基金(SKL2015KF01)

摘　　要：采用提拉法生长得到了新型超宽禁带透明半导体材料β-Ga_2O_3单晶,对其进行了物相分析和结晶质量的表征。XRD测试结果显示所获得的晶体为单一β相,晶体摇摆曲线半峰宽为3.48',峰形对称,表明具有较高的结晶质量。测试了晶体的透过光谱和荧光光谱,外推法得到晶体的禁带宽度为4.78 eV。New ultra-wide bandgap transparent semiconductor β-Ga_2O_3 single crystal was grown by the Czochralski method. Phase analysis and characterization of crystalline quality were carried out with XRD and XRC. The XRD demonstrates that the obtained crystal is cure β phase. The XRC shows a symmetrical shape and the FWHM is 3.48＇,indicating a good crystalline quality. The transmission spectrum and luminescence spectrum were investigated,and the bandgap was estimated to be 4.78 eV.

关 键 词：β-Ga2O3单晶 提拉法 宽禁带半导体 

分 类 号：O782.5[理学—晶体学]