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机构地区:[1]中国科学技术大学高分子科学与工程系,科学院软物质化学重点实验室,合肥230026
出 处:《Chinese Journal of Chemical Physics》2017年第5期571-575,I0002,共6页化学物理学报(英文)
基 金:This work was supported by the National Natural Science Foundation of China (No.51673181).
摘 要:We studied the dielectric properties of organosilicon-containing helical cyclopolymer PbMA which consists of PMMA main chains and tetramethyldisiloxane side rings. PbMA formed films with excellent uniformity through spin-coating onto highly n-doped silicon (n-Si) wafers for constructing devices of dielectric measurements, on which the dielectric properties and I-V characteristics of PbMA were studied. PbMA has a much lower dielectric constant (lower than 2.6) in the frequency range of 10-105 Hz, and better thermal stability than PMMA does. I-V data showed that the metal/PbMA/n-Si devices have different conducting directions, depending on whether Au or Al deposited over PbMA layers.
关 键 词:Polymer dielectrics Spin-coating film Disiloxane-bridged cyclopolymer
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