本征ZnO纳米线的原位生长及其对痕量H_(2)S气体的敏感性  

In Situ Growth of Intrinsic ZnO Nanowires for Trace-level H_(2)S Gas Sensing

作　　者：丁培 黄海云 徐涛 郑丹 许鹏程[2] 陈莹 

机构地区：[1]上海应用技术大学化学与环境工程学院,上海201418 [2]中国科学院上海微系统与信息技术研究所传感技术国家联合重点实验室,上海200050

出　　处：《仪表技术与传感器》2017年第11期21-24,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金(61401446);中科院传感技术重点实验室基金(SKT1401).

摘　　要：文中研究了通过低温水热法在微传感器表面原位生长不同直径的本征ZnO纳米线,用于痕量H_2S气体的检测,比较了不同尺寸ZnO纳米线传感器对H_2S的气敏性。实验结果表明:在150℃条件下,随着ZnO纳米线直径的缩小(200 nm→50 nm→20 nm),其对H_2S的气敏性显著提高。在相同H_2S气体浓度(5 ppm)下,50 nm ZnO纳米线的响应值是200 nm的5.4倍,检测下限为50 ppb,灵敏度均值达到6.4×10-2ppm-1;20 nm ZnO的响应值比50 nm ZnO的响应值进一步增大,检测下限达到10 ppb,是50 nm ZnO的5倍,检测灵敏度均值为2.0×10-3ppm-1,是50 nm ZnO的32倍。这些主要是由于纳米尺寸效应的影响。ZnO nanowires（ NWs）,with different diameter,are synthesized by a hydrothermal method,and they are in situ grown on the surface of a micro-sensor for detecting trace H2 S gas. The sensitivity of ZnO NWs to H2 S gas was tested for different diameters. Experimental sensing results show that,at 150 ℃,the sensitivity to H2 S gas increases significantly as the diameter of ZnO nanowires is reduced（ 200 nm→50 nm→20 nm）. At the same concentration of H2 S（ 5 ppm）,the response of 50 nm ZnO NWs is 5.4 times higher than 200 nm NWs,and the detection limit of 50 nm ZnO is 50 ppb and the mean sensitivity reaches6. 4 ×10-2 ppm-1. The sensing result of 20 nm ZnO NWs is further increased,the detection limit reaches 10 ppb and that is 5 times higher than 50 nm ZnO,the average detection sensitivity of 20 nm ZnO NWs is 2×10-3 ppm-1 which is 32 times that of 50 nm ZnO. All these are mainly due to the nano-size effect.

关 键 词：ZNO纳米线 H_(2)S气体检测 纳米尺寸效应 气体传感器 

分 类 号：O614[理学—无机化学]