Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors  

作　　者：崔鹏 林兆军 付晨 刘艳 吕元杰 

机构地区：[1]School of Microelectronics, Shandong University [2]National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute

出　　处：《Chinese Physics B》2017年第12期456-461,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11174182,11574182,and 61674130)

摘　　要：AlGaN/GaN heterostructure field-effect transistors （HFETs） with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance-voltage curves of the gate Shottky contacts for the AlGaN/GaN HFETs, we find that after floating gate experiences 600℃ rapid thermal annealing, the larger the floating gate length, the larger the two-dimensional electron gas electron density under the gate region is. Based on the measured capacitance-voltage and current-voltage curves, the strain of the AlGaN barrier layer in the gate region is calculated, which proves that the increased electron density originates from the increased strain of the AlGaN barrier layer.AlGaN/GaN heterostructure field-effect transistors （HFETs） with different floating gate lengths and floating gates annealed at different temperatures, are fabricated. Using the measured capacitance-voltage curves of the gate Shottky contacts for the AlGaN/GaN HFETs, we find that after floating gate experiences 600℃ rapid thermal annealing, the larger the floating gate length, the larger the two-dimensional electron gas electron density under the gate region is. Based on the measured capacitance-voltage and current-voltage curves, the strain of the AlGaN barrier layer in the gate region is calculated, which proves that the increased electron density originates from the increased strain of the AlGaN barrier layer.

关 键 词：AlGaN/GaN HFETs floating gate rapid thermal annealing STRAIN 

分 类 号：TN386[电子电信—物理电子学]