二维金光栅增强AlGaN/GaN量子阱中红外探测器的垂直光耦合  

Vertical optical coupling of AlGaN/GaN quantum well mid-infrared photodetector based on two-dimensional gold grating enhancement

作　　者：彭飞[1] PENG Fei(Department of Electronic Engineering, Shanghai Technical Institute of Electronics and Information Shanghai 201411, China)

机构地区：[1]上海电子信息职业技术学院电子工程系,上海201411

出　　处：《量子电子学报》2017年第6期742-746,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金,11574166;江苏省高校自然科学研究重大项目资助,14KJA510005~~

摘　　要：利用对入射光源偏振性不敏感的二维金光栅结构来增强AlGaN/GaN量子阱中红外光电探测器的垂直光耦合。采用有限元法(FEM)计算了探测器结构中的电场分布和能量流动,发现采用二维金光栅时量子阱区有效电场强度比采用Si_3N_4光栅时高出2个数量级,这主要源于金光栅与AlGaN界面处激发形成的表面等离激元(SPP),对光能流动方向、光场振动方向产生了强烈的改变。无论光源的偏振性如何,当垂直入射电磁波波长为4.7μm,电场强度E为1 V/m时,量子阱区的有效|E_z|~2达到了0.7(V/m)~2,为实现AlGaN/GaN量子阱中红外光电探测器焦平面阵列提出了一种解决方案。The vertical optical coupling of A1GaN/GaN quantum well mid-infrared photodetector is enhanced by using two-dimensional gold grating structure, which is not sensitive to the polarization of incident light source. The electric field distribution and energy flow in the detector structure axe calculated by the finite element method （FEM）. It is found that the effective electric field intensity of quantum well with two- dimensional gold grating is two orders of magnitude higher than that of Si3N4 grating. It is mainly due to the surface plasmon polariton （SPP） excited at the interface of gold grating and A1GaN, which strongly changes the direction of light energy flow and electric field vibration. No matter how the light source polarization is, when the vertical incident electromagnetic wavelength is 4.7 μm, electric field intensity E is 1 V/m, the effective ｜E2｜2 in quantum well region reaches 0.7 （V/m）2, which provides a solution to realize the focal plane array of A1GaN/GaN auantum well mid-infrared photodetector_

关 键 词：光电子学 二维金光栅 有限元法 表面等离激元 AlGaN/GaN量子阱中红外光电探测器 

分 类 号：TN215[电子电信—物理电子学]