多次回流下Au80Sn20微观演变及对半导体激光性能影响  

Effects of Multiple Reflows on Au80Sn20 Microscopic Evolution and Diode Laser Photoelectric Performance

作　　者：成健[1] 尧舜[1] 罗校迎 王志平[1] 贾冠男[1] 邱运涛[1] 王智勇[1] Cheng Jian;Yao Shun;Luo Xiaoying;Wang Zhiping;Jia Guannan;Qiu Yuntao;Wang Zhiyong(College of Laser Engineering, Beijing University of Technology, Beijing 100124, China)

机构地区：[1]北京工业大学激光工程研究院,北京100124

出　　处：《应用激光》2017年第5期674-680,共7页Applied Laser

摘　　要：研究了在多次回流下Au80Sn20焊层的微观演变机制及对半导体激光性能的影响,为采用自动化精密校准机械设备,多次回流实现激光叠阵自动化高精度封装提供技术支持。实验中,采用扫描电镜对不同回流次数下Au80Sn20焊层金属化合物(IMC)的SEM形貌特征进行了观察,并做EDS能谱组分分析。同时,对多次回流过程中各阶段进行光电性能测试,分析Au80Sn20焊料在多次回流焊接下的微观演变,以及对激光光电性能的影响。实验结果表明:对于相同芯片,同一封装形式,同批次的器件,在340℃,30s的回流焊接条件下,多次回流加热2~6次,即340℃间歇循环作用180s以内,Au80Sn20焊层演变主要在于微观相形态的变化,对激光光电性能影响不大;在加热到8~10次时,即340℃间歇循环作用300s左右,Au80Sn20焊层与芯片边界处出现柯肯达尔空洞;12~20次后,即340℃间歇循环作用至600s,柯肯达尔空洞融合变大,数量增多,致使半导体激光光电性能明显下降。The effects of reflow soldering cycles on Au80 Sn20 microscopic evolution and laser photoelectric performance were studied.It can provide technical support to multi-reflow packaging of QCW diode laser array and realize automated and accurate packaging by using automatic precision calibration machinery and equipment.In the experiment,by using scanning electron microscopy（SEM）and energy dispersive spectrometer（EDS）,the microscopic characteristics of inter metallic compound（IMC）in Au80 Sn20 weld layer were observed and measured under different times of reflow soldering.At the same time,laser photoelectric performance was tested in each stage of multi-reflow process,and the microscopic evolution of Au80 Sn20 solder under multi-reflow soldering and laser photoelectric performance were analyzed.The experimental results show that,for the same chip,the same package,the same batch of equipment,at 340 ℃,30 sreflow soldering conditions,multi-reflow heating 2 to 6 times,that is,340 ℃intermittent cycle within 180 s,the evolution of the Au80 Sn20 weld layer mainly depends on the change of the micro-morphology,which has little effect on the laser photoelectric performance;8 to 10 times,that is,340℃intermittent cycle of about 300 s,kirkendall void appeared on the boundary of Au80 Sn20 weld layer and the diode laser chip;12 to 20 times,that is,340℃intermittent cycle to 600 s,kirkendall void became larger,the number increases,resulting in diode laser photoelectric performance decreased significantly.

关 键 词：半导体激光叠阵 Au80Sn20焊料 回流焊接 柯肯达尔空洞 

分 类 号：TN248.4[电子电信—物理电子学]