1880nm侧向耦合分布反馈激光器的研究  

Study on the 1 880nm Laterally Coupled Distributed-feedback GaSb-based Lasers

作　　者：李欢[1,2] 谢圣文 张宇 柴小力 黄书山 王金良 牛智川[2,3] Li Huan;Xie Shenwen;Zhang Yu;Chai Xiaoli;Huang Shushan;Wang Jinliang;Niu Zhichuan(School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China;State Key Laboratory for Supperlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)

机构地区：[1]北京航空航天大学物理与核能工程学院,北京1000191 [2]中科院半导体研究所半导体超晶格国家重点实验室,北京100083 [3]中国科学院大学材料科学与光电技术学院,北京101408

出　　处：《应用激光》2017年第5期727-731,共5页Applied Laser

基　　金：国家973计划资助项目(项目编号:2014CB643903;2013CB932904);国家重大仪器专项资助项目(项目编号:2012YQ140005);国家自然科学基金资助项目(项目编号:61435012;U1037602;61290303);中国科学院战略先导专项(B)资助项目(项目编号:XDB01010200)

摘　　要：完成1 880nm高阶锑化镓侧向耦合分布反馈半导体激光器的制备。采用侧向耦合(Lateral coupled)结构使得外延材料可以一次生长完成,避免了外延层中Al组分容易氧化的特性导致的二次外延生长困难的问题,采用接触式紫外光刻技术制备了高阶光栅,大大降低了激光器的制备成本,实现了室温1 880nm单模连续波长激射,最大输出功率14.5mW,波长随温度漂移速率0.000 5nm/mA。Complete a high order GaSb-based laterally coupled distributed-feedback（LC-DFB）lasers emitting at 1 880 nm wavelength.The structure of lateral coupled allows the epitaxial material to be completed at one time and avoids the problem of the second epitaxial growth due to the characteristics of easy oxidation in the epitaxial layer Al components.By using contact type UV lithography to fabricate high order gratings,have greatly reduced the preparation cost of the laser.At room temperature the lasers emitted the maximum power of 14.5 mW in a single longitudinal mode at 1 880 nm and the current dependent wavelength tuning coefficient of 0.000 5 nm/mA was measured for the laser output.

关 键 词：侧向耦合分布反馈激光器 LC-DFB 镓锑基激光器 高阶光栅 

分 类 号：TN383[电子电信—物理电子学]