DSSC用钒掺杂二氧化钛薄膜的制备及性能表征  

Preparation and characterization of V-doped titanium dioxide films used for dye-sensitized solar cell

作　　者：赖奇 廖先杰 张树立 李俊翰 吴恩辉 钟璨宇 LAI Qi;LIAO Xian-Jie;ZHANG Shu-Li;LI Jun-Han;WU En-Hui;ZHONG Can-Yu(Panxi Science and Technology Innovation Center, Panzhihua University,Panzhihua 617000, China)

机构地区：[1]攀枝花学院攀西科技创新中心,攀枝花617000

出　　处：《四川大学学报（自然科学版）》2017年第6期1289-1294,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：攀枝花学院校级项目(0290100533)

摘　　要：为获得高性能电池用二氧化钛薄膜,采用射频磁控溅射法制备了掺V的TiO2薄膜.使用分光光度计、催化反应器和电化学工作站等研究了溅射时间、退火温度和掺钒量等对TiO2薄膜光学性能、光催化性能和超亲水性和电学性能的影响.研究表明溅射时间越长,薄膜紫外光区的透射率越低.3h条件下,在小于400nm区域内,溅射薄膜的透射率已经降至60%以下.退火温度对薄膜的亲水性能和光催化性能有一定的影响,经400℃退火的薄膜具有较好的光催化性能和超亲水性.掺V使薄膜的吸收峰红移和禁带宽度变窄,当掺杂量为0.5%时,TiO2薄膜红移量最大,禁带宽度变也为2.88eV.将制备的掺钒二氧化钛薄膜制备成染料敏化太阳能电池(DSSC),结果表明掺V量为0.5%的二氧化钛薄膜的光响应范围增大,所制备电池的开路电压和短路电流都高于未掺杂电池,其中短路电流从24.82μA增大到了88.15μA.表明电池的综合性能有所提高.In order to obtain titanium dioxide film used for high performance Dye-sensitized solar cells （DSSC） the V-doped TiO2 film was prepared by RF magnetron sputtering in this paper. The effects of sputtering time, annealing temperature and amounts of vanadium-doped （V-doped） on the optical properties, photocatalytic properties, super hydrophilicity and electrical properties of the TiO2 film were investigated by spectrophotometer, catalytic reactor and electrochemical workstation. The results showed that the longer the sputtering time, the lower the transmittance of the thin film in the UV region, under the condition of 3 h sputtering time, the transmittance of the sputtered film has been reduced to below 60 % in the region of less than 400 nm. The annealing temperature influences the hydrophilicity and photocatalytic properties of the films at a certain degree, and that at 400 ℃ is best. The absorption peak of the film was red shifted and the band gap became more narrow because of the doped V. When the doping amount was 0.5%, the red shift of TiO2 film was the largest and the band gap was 2.88 eV. Then, DSSC was prepared by the V-doped TiO2 thin films. The results showed that the range of the light response of TiO2 thin film increasesed when the amount of doped V is 0.5 %, and the open circuit voltage and short-circuit current are higher than that of the undoped, especially the short-circuit current increasesed from 24.82 to 88.15 μA, which showed that the performances of the cells were improved.

关 键 词：钒掺杂 TIO2薄膜 射频磁控溅射 DSSC电池 性能 

分 类 号：O484.4[理学—固体物理]