Electron-beam irradiation induced optical transmittance enhancement for Au/ITO and ITO/Au/ITO multilayer thin films  

作　　者：Wenzuo Wei Ruijin Hong Jinxia Wang Chunxian Tao Dawei Zhang 

机构地区：[1]Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China

出　　处：《Journal of Materials Science & Technology》2017年第10期1107-1112,共6页材料科学技术（英文版）

基　　金：supported financially by the National Key Research and Development Program of China (No. 2016YFB1102303);the National Basic Research Program of China (973 Program) (No. 2015CB352001);the National Natural Science Foundation of China(No. 61378060)

摘　　要：Electron beam（EB） irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported.The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction,atomic force microscopy, four-point probe resistivity measurement system, and UV–vis-NIR double beam spectrometer, respectively. Those results show that the EB irradiation has the effects of improving the crystalline of samples, widening the optical band gap of both thin films, reducing the sheet resistance,and improving the transmittance of samples.Electron beam（EB） irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported.The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction,atomic force microscopy, four-point probe resistivity measurement system, and UV–vis-NIR double beam spectrometer, respectively. Those results show that the EB irradiation has the effects of improving the crystalline of samples, widening the optical band gap of both thin films, reducing the sheet resistance,and improving the transmittance of samples.

关 键 词：EB irradiation Multilayer thin films Structure Optical-electrical properties TRANSMITTANCE 

分 类 号：TB383.2[一般工业技术—材料科学与工程]