基于窄带隙聚合物的高性能可见-近红外光伏探测器  

High performence visble-near infrared photovoltaic detector based on narrow bandgap polymer

作　　者：肖标[1] 张敏莉 王洪波[1] 刘继延[1] 

机构地区：[1]江汉大学,光电化学材料与器件教育部重点实验室,武汉430056

出　　处：《物理学报》2017年第22期301-306,共6页Acta Physica Sinica

基　　金：国家高技术研究发展计划(批准号:2015AA033400);国家自然科学基金(批准号:21302232);湖北省自然科学基金(批准号:2014CFA098);中国博士后科学基金(批准号:2016M600567);光电化学材料与器件教育部重点实验室(江汉大学)开放课题基金(批准号:JDGD-201608);欧阳康乐产学研用基金资助的课题~~

摘　　要：聚合物光伏探测器是一种极具应用前景的新型光电探测器件.研究了基于窄带隙聚合物的高性能可见-近红外光伏探测器,结果表明,所制备的光伏探测器在可见至近红外光谱范围内具有宽的光谱响应(380—960 nm)、出色的响应度(840 nm时达到380 mA/W)和归一化探测度;同时,器件在暗态反偏条件下的能级示意图揭示了器件内平均电场较低是较厚光敏层器件具有低噪声电流的主要原因.电容-电压与时间周期性响应曲线研究表明聚合物光伏探测器具有快速的响应能力和良好的周期重复性.Polymer-based visible-near infrared photodetectors have attracted considerable attention in the recent years due to their unique advantages of low cost of fabrication, compatibility with lightweight/flexible electronics, and wide material sources. Current researches mainly focus on high performence visble-near infrared photovoltaic detector based on narrow bandgap polymer. Device structure of the photodetector is ITO/PEDOT：PSS/photosensitive layer/Ca/Al. The weak light（0.4 mW/cm^2, 800 nm） and reverse bias（-2 V） induce insignificant differences in photocurrent among the devices.Current values of 1.69 × 10^（-4） A/cm^2,7.96 × 10^（-5） A/cm^2 and 6.98× 10^（-5） A/cm^2 are obtained with photosensitive layer thickness values of 100, 200 and 300 nm, respectively. However, the dark current density-voltage characteristics of the detectors with various thickness values of the photosensitive layer show that reverse bias（-2 V） induces significant differences in current among the devices. Current values of 1.35 × 10^（-6） A/cm^2, 1.13× 10^（-7）A/cm^2 and 2.98 × 10^（-8） A/cm^2 are obtained with photosensitive layer thickness values of 100 nm, 200 nm and 300 nm, respectively. Meanwhile, all detectors possess high rectification ratios over 10~5（±2 V）, indicating good diode rectification characteristics. Photosensitivity measurements show that detection spectral regions of the detectors are extended from 380 nm to 960 nm. The values of detectivity（D~＊） of detectors with various thickness values of photosensitive layers are investigated, and the obtained values of D~＊ of tested detectors are found to be very stable in a range from 400 nm to 860 nm, and the average D~＊ value for the 300 nm thick device in this spectral range is as high as 6.89 x 1012 Jones. The latter compares well with values obtained with silicon detectors. In a range from 800 nm to 900 nm, the estimated detectivities of the 300 nm and200 nm thick detectors are slightly higher than those obtained with InGaAs

关 键 词：聚合物光伏探测器 可见-近红外 窄带隙聚合物 

分 类 号：TN215[电子电信—物理电子学]