P型微晶硅氧薄膜光电性能研究  

Optical and Electrical Properties of P-type Microcrystalline Silicon Oxide Thin Film

作　　者：彭文博[1] 刘大为[1] 高虎[1] 杨彦斌[2] 黄艳红 于威[2] 

机构地区：[1]中国华能集团清洁能源技术研究院有限公司,北京102209 [2]河北大学物理科学与技术学院,保定071002

出　　处：《人工晶体学报》2017年第11期2115-2118,2124,共5页Journal of Synthetic Crystals

基　　金：华能集团科技项目(TW-13-CERI01)

摘　　要：本工作采用甚高频等离子体化学气相沉积(VHF-PECVD)技术制备了P型微晶硅氧窗口层薄膜,讨论了P型微晶硅氧的光电特性随硼烷掺杂率的变化。采用紫外-可见透射光谱,拉曼光谱,傅立叶变换红外吸收光谱(FTIR),暗电导测量对薄膜的光电特性进行了表征。结果表明,P型微晶硅氧材料均表现为微晶态,随着硼烷掺杂率增加,晶化程度逐步降低,暗电导率快速减小,光学带隙持续降低。该结果可归因于硼烷掺杂的增加抑制晶化使得非晶成分增多,有效掺杂率降低导致薄膜电导率下降,另一方面,对硅氧物相分离的阻碍作用导致薄膜带隙下降。硼烷掺杂率为0.4%样品的电导率高达0.158 S/cm且光学带隙为2.2 e V,兼具高透射性和良好电导率,可作为高效硅基太阳电池的窗口层。The p-type microcrystalline silicon oxide （p-uc-SiOx） thin-film window layers were deposited by using VHF-PECVD technique, the optical and electrical properties of p-uc-SiOx films with variable borane doping rate were discussed. The UV-vis, Raman, FTIR and dark conductivity tests were utilized to investigate the optical and electrical properties of these films. The results showed that the p-uc-SiO% materials appeared to be in microcrystalline state, which between amorphous and crystalline. The crystal fraction decreased with increasing borane doping rate. At the same time, dark conductivity showed a sharp dropdown and the optical band gap decreased steadly. The crystallizing process was depressed with more boron atom incorporating into the materials. The decreased effective doping caused lower dark conductivity, on the other hand, the suppressed phase separation of silicon and silicon oxide was responsible for the result of lower optical band gap. The sample with 0.4% doping rate show a very high conductivity of 0. 158 S/cm and optical band gap of 2. 2 eV, it is a sutiable candicate of the windower layer with high optical band gap and good conducitivity for silicon thin film solar cells.

关 键 词：微晶硅氧 太阳电池 窗口层 

分 类 号：O753[理学—晶体学]