提拉法生长高质量氟化镁单晶  

High-quality MgF_2 Single Crystal Grown by Czochralski Method

作　　者：徐超 张钦辉 刘晓阳 刘建强 史达威 张云天 甄西合 

机构地区：[1]北京首量科技股份有限公司,北京101111 [2]中国石油工程建设有限公司北京设计分公司,北京100083 [3]北京玻璃研究院,北京101111

出　　处：《人工晶体学报》2017年第11期2304-2305,共2页Journal of Synthetic Crystals

摘　　要：设计了适合提拉法生长氟化镁单晶体的温场,采用提拉法成功生长出了直径100 mm的高质量氟化镁单晶。晶体内无气泡等宏观缺陷、无开裂;通过精密退火处理后,晶体透过率达到95%,平均应力双折射小于0.5 nm/cm。上述结果表明采用提拉法可以生长高质量的氟化镁单晶。The compatible temperature field for MgF2 single crystal grown by Czochralski method was designed. The high-quality MgF2 single crystal with the diameter of 100 mm was successfully grown by this method. The single crystal shows no macroscopic defect or crack, and no bubble was found in the crystal. After artificial annealing, the transmittance of the crystal is as high as 95 % , and the stress birefringence is less than 0. 5 nm/cm. These results show that high-quality MgF2 single crystal can be grown by means of Czochralski method.

关 键 词：氟化镁单晶 提拉法 透过率 应力双折射 

分 类 号：O484[理学—固体物理]