半导体激光(GaAlAs)治疗种植体周围黏膜炎的效果评价  

Evaluation of the effect of semiconductor laser(GaAlAs) on peri-implant mucositis

作　　者：王佐君 邹廷前 

机构地区：[1]荆门市口腔医院口腔科,湖北荆门448000

出　　处：《临床口腔医学杂志》2017年第11期685-687,共3页Journal of Clinical Stomatology

摘　　要：目的:比较半导体激光治疗和传统牙周治疗对种植体周围黏膜炎的临床治疗差异。方法:选择种植体周围黏膜炎患者20例,以基础治疗后1周为基线。随机分为两组,实验组应用刮治器刮治+半导体激光(Ga Al As)治疗,激光能量设定为970 nm,功率为1瓦特,脉冲模式;对照组应用刮治器刮治,均辅助派力奥(盐酸米诺环素软膏)进行牙周塞治。探诊测量基线和治疗后1个月、3个月改良菌斑指数(modification plaque index,m PLI),探诊深度(probing depth,PD),改良龈沟出血指数(modified sulcus bleeding index,m SBI)。结果:治疗后1个月和3个月,两组m PLI,PD,m SBI与基线比较均有明显下降(P<0.05),但两组间疗效差异无统计学意义。结论:半导体激光(Ga Al As)治疗种植体周围粘膜炎安全有效。Objective：To compare the effection of semiconductor laser therapy with traditional periodontal therapy in peri-implantal mucositis managements. Methods：Twenty cases of peri-implant mucositis were selected in the follow-up group after implantation,and the baseline was set at the first week after basic periodontal therapy. According to the principle of single blind random,the patients were divided into two groups. The experimental group had been treated by scaling treatment with semiconductor laser（ GaAlAs） . The laser energy was set at 970 nm and the power was 1 watt in the pulse mode. The control group had been treated with sclera therapy. One and three months after treatment,as well as the baseline,the modified plaque index（ mPLI） ,probing depth（ PD） ,modified sulcus bleeding index（ mSBI） were tested. Results：There was no significant difference in mPLI,PD and mSBI between the two groups,respectively（P〉0.05）,and both groups showed significant difference at 1 month and 3 months after treatment compared with the baseline（P〈0.05）. Conclusion：Semiconductor laser （ GaAlAs） is safe and effective for the treatment of peri-implantal mucositis.

关 键 词：种植体周围粘膜炎 激光治疗 临床效果 

分 类 号：R781.4[医药卫生—口腔医学] R781.5[医药卫生—临床医学]