磁场溅射+磁场退火对Ce_9Fe_(91)薄膜高频软磁性能的优化  

Modified magnetic properties of Ce_9Fe_(91) films fabricated by field-sputtering + field-annealing

作　　者：熊坚 袁斌 洪家君 谢林 熊玲华 周雪云 侯翠岭 

机构地区：[1]九江学院理学院江西省固体微结构重点实验室,江西九江332005

出　　处：《磁性材料及器件》2017年第6期9-13,共5页Journal of Magnetic Materials and Devices

基　　金：江西省自然科学基金资助项目(20161BAB206104);江西教育科技厅项目(GJJ151070)

摘　　要：为了研究磁场溅射和磁场退火对材料磁性能的影响,用磁控溅射制备了几组CeFe薄膜,分别为衬底不加磁场的样品(No)和溅射时衬底加磁场的样品(FS),No和FS样品在外部磁场作用下分别在260℃、360℃热退火处理得到的样品。通过比较磁滞回线和高频磁谱,发现No样品磁退火之后各项性能几乎没变化。而磁场溅射的样品矫顽力更大,面内单轴各向异性场也更大,共振频率变化不大。磁场溅射之后再磁场退火显著地降低了CeFe薄膜的矫顽力,增大饱和磁化强度,增高共振频率。因此最有效的方法是同时利用磁场溅射和磁场退火来提高CeFe薄膜的软磁特性和高频截止频率。To study the effect of the external magnetic field during magnetic thin film fabrication and annealing process on magnetic properties, no-field-sputtered samples （No） were prepared under zero external magnetic field. Field-sputtered samples （FS） were prepared under an external magnetic field of 400 Oe applied in the direction parallel to the surface of substrate during sputtering. A serial of field-annealed samples （FA） were obtained after No and FS annealed at 260 ℃ and 360 ℃ under the applied magnetic field of 600 Oe in the easy axis direction. By comparing the magnetic hysteresis loop and high frequency spectrum, we found that the field-sputtering was much more effective than the field-annealing in improving the in-plane uniaxial anisotropy of CeFe thin films, and the field-annealing was much more effective than the field-sputtering in reducing the coercivity of CeFe thin films. Field-sputtering＋field-annealing is the most effective method for improving the soft magnetic properties and high frequency cut-off frequency of CeFe films.

关 键 词：CeFe薄膜 软磁性能 面内单轴各向异性 磁场溅射 磁场退火 

分 类 号：TM271.2[一般工业技术—材料科学与工程] O484.43[电气工程—电工理论与新技术]