一种新颖的高阶温度补偿的带隙电压基准电路  

A NOVEL CURVATURE-COMPENSATED CMOS BANDGAP VOLTAGE REFERENCE

作　　者：刘利峰 王洪来 

机构地区：[1]戴泺格集成电路(天津)有限公司,天津300457

出　　处：《电子技术（上海）》2017年第11期48-50,共3页Electronic Technology

摘　　要：文章设计了一种使用新颖的高阶温度补偿方法的1.2V带隙基准电路。使用0.35μm CMOS工艺的仿真结果表明,本文所设计的电压基准在-40?C到150?C的温度范围内,温度系数只有1.2ppm/?C。电源电压从2V到5V的范围内,输出电压变化0.066%。本文所设计的电压基准特别适用于对输出电压精度要求较高,且电源电压比较低的应用。A high-order curvature-compensated 1.2 V CMOS bandgap voltage reference, which utilizes a new temperature compensation method, is presented in this paper. Simulation results with 0.35μm CMOS process show that the proposed voltage reference can operate down to 2 V with a temperature coefficient of 1.2 ppm/℃ in the temperature range between-40℃ and 150℃.The voltage variation is 0.066% when operate voltage changes from 2 V to 5 V. The proposed bandgap reference can be used in the design which requires high precision voltage reference.

关 键 词：带隙电压基准 高阶温度补偿 温度系数 

分 类 号：TN742[电子电信—电路与系统]