玻璃相对ZnO压敏电阻片通流能力的影响  

Effects of Glass Phase on Surge Energy Absorption Capability of ZnO Varistor

作　　者：李煜 杨军 张虎 雷跃文 赵敏敏 

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088

出　　处：《混合微电子技术》2016年第4期33-35,共3页Hybrid Microelectronics Technology

摘　　要：本文研究了玻璃相的组成及含量对ZnO压敏电阻片通流能力的影响。结果表明，玻璃相含量越高，经冲击后的ZnO压敏电阻片压敏电压的变化率越高、过渡元素A的加入不利于提高ZnO压敏电阻片的通流能力。In this paper,the effect of glass phase on surge energy absorption capability of ZnO varistor is studied. The results show that the higher of weight content of the glass phase, the lower of surge energy absorption capability of ZnO varistor. And addi- tion of transition element is unfavourable to improve surge energy absorption capability of ZnO varistor,

关 键 词：varistor压敏电阻 玻璃相 通流能力 

分 类 号：TN604[电子电信—电路与系统]