A fractional-N frequency divider for multi-standard wireless transceiver fabricated in 0.18μm CMOS process  

作　　者：Jiafeng Wangt Xiangning Fan Xiaoyang Shi Zhigong Wang 

机构地区：[1]Nanjing Research Institute of Electronics Technology,Nanjing 210000,China

出　　处：《Journal of Semiconductors》2017年第12期73-80,共8页半导体学报（英文版）

摘　　要：With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source- coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. A-E modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18/tin CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510μm^2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.With the rapid evolution of wireless communication technology, integrating various communication modes in a mobile terminal has become the popular trend. Because of this, multi-standard wireless technology is one of the hot spots in current research. This paper presents a wideband fractional-N frequency divider of the multi-standard wireless transceiver for many applications. High-speed divider-by-2 with traditional source- coupled-logic is designed for very wide band usage. Phase switching technique and a chain of divider-by-2/3 are applied to the programmable frequency divider with 0.5 step. The phase noise of the whole frequency synthesizer will be decreased by the narrower step of programmable frequency divider. A-E modulator is achieved by an improved MASH 1-1-1 structure. This structure has excellent performance in many ways, such as noise, spur and input dynamic range. Fabricated in TSMC 0.18/tin CMOS process, the fractional-N frequency divider occupies a chip area of 1130 × 510μm^2 and it can correctly divide within the frequency range of 0.8-9 GHz. With 1.8 V supply voltage, its division ratio ranges from 62.5 to 254 and the total current consumption is 29 mA.

关 键 词：MULTI-STANDARD frequency synthesizer fractional-N frequency divider phase switching △-∑ modulat-or 

分 类 号：TN0[电子电信—物理电子学]