Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance  

作　　者：WANG Changsi XU Yuehang WEN Zhang CHEN Zhikai XU Ruimin 

机构地区：[1]School of Electronic Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China

出　　处：《Chinese Journal of Electronics》2017年第5期952-959,共8页电子学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61474020);the National Key Project of Science and Technology

摘　　要：A scalable large-signal model of AlGa N/Ga N High electron mobility transistors(HEMTs)suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current(Ids) formulation with a geometry-dependent thermal resistance(Rth) and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance(gm),which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method(FEM) simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.A scalable large-signal model of AlGa N/Ga N High electron mobility transistors（HEMTs）suitable for multi-harmonic characterizations is presented.This model is fulfilled utilizing an improved drain-source current（Ids） formulation with a geometry-dependent thermal resistance（Rth） and charge-trapping modification.The Idsmodel is capable of accurately modeling the highorder transconductance（gm）,which is significant for the prediction of multi-harmonic characteristics.The thermal resistance is identified by the electro-thermal Finite element method（FEM） simulations,which are physically and easily scalable with the finger numbers,unit gate width and power dissipations of the device.Accurate predictions of the quiescent currents,S-parameters up to 40 GHz,and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.

关 键 词：GaN HEMTs Large-signal model Scalable model Thermal resistance 

分 类 号：TN386[电子电信—物理电子学]