Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors  

作　　者：YU Xuming XU Yuehang WEN Zhang CHEN Zhikai HONG Wei 

机构地区：[1]State Key Laboratory of Millimeter Wave,Southeast Univeristy [2]School of Electronic Engineering, University of Electronic Science and Technology of China

出　　处：《Chinese Journal of Electronics》2017年第6期1319-1324,共6页电子学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61474020,No.61201004);the National Key Project of Science and Technology

摘　　要：Efficient parameter extraction method is essential to establish large signal statistical model. This paper presents an automatic parameter extraction method of I-V model for Gallium nitride(GaN) High electron mobility transistors(HEMTs) large signal statistical model. To accurate modeling the statistical characterization, all of 53 parameters in an I-V model are considered. In order to realize automatic parameter extraction, the model parameters are divided into blocks according to their physical meaning to reduce the complexity of the I-V model. Different parameter blocks are extracted separately by fitting the pulsed I-V transfer characteristic curves of the device at different quiescent bias points. A large signal statistical model for 0.25μm GaN HEMTs process has been established by using the proposed method after measuring 34 GaN HEMTs from 10 batches. The results show that the large-signal performances(Output power and Power added efficiency) can be reproduced with high accuracy by the proposed statistical model.Efficient parameter extraction method is essential to establish large signal statistical model. This paper presents an automatic parameter extraction method of I-V model for Gallium nitride（GaN） High electron mobility transistors（HEMTs） large signal statistical model. To accurate modeling the statistical characterization, all of 53 parameters in an I-V model are considered. In order to realize automatic parameter extraction, the model parameters are divided into blocks according to their physical meaning to reduce the complexity of the I-V model. Different parameter blocks are extracted separately by fitting the pulsed I-V transfer characteristic curves of the device at different quiescent bias points. A large signal statistical model for 0.25μm GaN HEMTs process has been established by using the proposed method after measuring 34 GaN HEMTs from 10 batches. The results show that the large-signal performances（Output power and Power added efficiency） can be reproduced with high accuracy by the proposed statistical model.

关 键 词：Statistical model Parameter extraction GaN HEMTs Large signal model 

分 类 号：TN386[电子电信—物理电子学]