晶体硅表面纳米孔减反光结构的制备及其性能表征  

Fabrication and performance of silicon nanohole antireflection structure for crystalline silicon solar cells

作　　者：戴恩琦 王欢欢 谢汝平 叶杉杉 陈雨欣 高凝 张帅 吕文辉 

机构地区：[1]湖州师范学院理学院应用物理系,浙江湖州313000

出　　处：《光电子．激光》2017年第12期1325-1330,共6页Journal of Optoelectronics·Laser

基　　金：浙江省自然科学基金(LY15F040002);国家大学生创新训练计划(201610347007);浙江省大学生科技创新活动计划项目新苗人才计划(2016R427017);湖州师范学院自然科学(2014XJKY48)资助项目

摘　　要：利用金属辅助硅化学刻蚀法在晶体硅表面制备了大面积有序硅纳米结构,并基于金属辅助硅化学刻蚀的机理,实现了硅纳米结构从线阵列到孔阵列转变。漫反射光谱的测试结果表明,相对于平面、金字塔结构,硅纳米孔织构的晶体硅具有卓越的减反光性能,在300~1 100nm光谱范围内的AM1.5G太阳光子的光反射损失比低于3.6%。硅纳米孔阵列减反光性能优异,制备方法简单、快速,且其孔壁互连,有益于晶体硅太阳电池的后续制备工艺及其表面结构机械稳定,可作为减反光结构应用于晶体硅太阳电池。Large area nano-structured silicon has been fabricated by using metal assi sted catalyst wet chemical etching method.Based on the mechanism of metal assisted catalyst wet chemical etching, the architecture of the nano-structured Si is changed from nanowire array s to nanohole arrays by adjusting the morphology of the metal Ag catalytic layer.The Si nanohole with textured Si surfaces show excellent broadband antireflection compared with that of the planar or pyramid textured surface.The light reflectance loss rate of the crystalline Si with nano hole textured Si surfaces is low than 3.6% for AM 1.5G photons in the 300-1100nm range.T he Si nanoholes can be antireflection structure for crystalline Si solar c ell application,due to its simple and fast fabrication process,excellent broadband antireflection and mechanical stability.

关 键 词：硅纳米孔 减反光结构 晶体硅太阳电池 减反光性能 

分 类 号：TM914.4[电气工程—电力电子与电力传动]