半导体二次电子像中的掺杂衬度  

Secondary electron dopant contrast in semiconductors

作　　者：陈文雄[1] 徐军[1] 

机构地区：[1]北京大学物理学院电镜室,北京100871

出　　处：《电子显微学报》2002年第4期406-410,共5页Journal of Chinese Electron Microscopy Society

摘　　要：本文详细评述和介绍了近几年来国际上关于扫描电镜二次电子像中的掺杂衬度方面的实验和理论研究成果 ,总结了实验中发现的各种现象 ,并用电离能的观点对所有这些现象作出了理论上的解释 。In this paper, we reviewed the experimental and theoretical research work on secondary electron dopant contrast in semiconductors in detail, which has been carried out in recent years mainly by two groups of Oxford and Cambridge University, UK, summarized the phenomena discovered in experiments and their interpretation in the view point of ionization energy, and pointed out their application prospects.

关 键 词：半导体 二次电子像 掺杂衬度 功函数 电离能 扫描电子显微镜 表面形貌 

分 类 号：TN304[电子电信—物理电子学]