SAF结构自旋阀的制备及其性能研究  

Prepare and Performance Study of Spin Valve with SAF Structure

作　　者：王向谦[1] 李建锋[1] 宋玉哲[1] 郑礴[1] 韩根亮[1] Wang Xiangqian;Li Jianfeng;Song Yuzhe;Zheng Bo;Han Genliang(Institute of Seusor, Gansu Academy of Sciences, Lanzhou 730000, Chin)

机构地区：[1]甘肃省科学院传感技术研究所,甘肃兰州730000

出　　处：《甘肃科学学报》2017年第6期15-18,共4页Journal of Gansu Sciences

基　　金：甘肃省科学院青年科技创新基金(2014QN-14;2014QN-17);甘肃省科学院应用研究与开发计划(2013JK-01;2015JK-08);甘肃省科学院创新群体(CX201602);甘肃省科技支撑计划(144GKCA021)

摘　　要：通过高真空直流溅射法在硅基地上沉积了结构为Ta/NiFe/CoFe/Cu/CoFe/Cu/CoFe/IrMn/Ta的具有人工反铁磁(SAF)被钉扎层结构的自旋阀薄膜,研究了SAF结构中的CoFe层厚度对自旋阀的巨磁电阻变化率和交换场的影响。结果表明:与无SAF结构的自旋阀相比较,SAF结构自旋阀的交换场可以达到350Oe。进一步讨论了SAF结构中CoFe层厚对自旋阀薄膜交换场和磁阻率的调制机理。Spin valve with artificial antiferromagnetic and pinning layer structure is deposited on siliconbased ground by fine vacuum and direct current sputtering method,and its structure is Ta/NiFe/CoFe/Cu/CoFe/Cu/CoFe/IrMn/Ta.The effect of thickness of CoFe in SAF on changing rate of giant magnetoresistance and exchange field of spin valve is studied.The result shows that the exchange field of SAF structure valve may reach 350 Oe by comparing with that without SAF structure.In SAF,modulating mechanism from CoFe thickness to exchange field of spin valve and magnetic reluctivity is discussed here.

关 键 词：巨磁电阻 自旋阀 人工反铁磁层 交换场 

分 类 号：O482.54[一般工业技术—材料科学与工程]