电流模式的高阶曲率补偿CMOS带隙基准源  

High-order curvature-compensated CMOS of current mode

作　　者：张普杰 王卫东[1] 李耀臻 Zhang Pujie;Wang Weidong;Li Yaozhen(School of Information and Communication Engineering, Guilin University of Electronic Technology, Guilin 541004, China)

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《微型机与应用》2017年第24期16-18,21,共4页Microcomputer & Its Applications

摘　　要：因为传统的带隙电压基准源只经过了一阶温度补偿,且输出电压只能在1.2 V左右,所以为了得到一个可调的、更高精度的电压基准源,提出了电流模式的带隙电压基准源电路。电路采用了高阶曲率补偿方法,且输出的基准电压可根据输出电阻的大小进行调节。电路采用gpdk090 CMOS工艺,通过Spectre仿真,当电源电压为3.6 V、在-60℃^-120℃温度范围内、温度系数为14.4×10-6/℃时电源电压抑制比为78.3 d B,输出电压平均为1.162 V。The traditional bandgap voltage reference source is only the first-order temperature compensated ,and the output voltage reference is only at about l. 2 V. in order to get an adjustable and higher precision voltage reference, a current-mode bandgap voltage reference source was presented in this paper. Circuit adopted high-order curvature compensation methods, and the output of the reference voltage can be adjusted according to the size of the output resistance. It was fabricated in gpdk090 CMOS process. By simulation with Spectre, supplying voltage of 3.6 V, a temperature coefficient of 14.4 × 10-6/℃ in the temperature range of -60~C to 120℃ , the power supply rejection ratio is 78.3 dB, and the averaged reference voltage is 1. 162 V.

关 键 词：带隙电压基准源 高阶曲率补偿 温度系数 电压抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]