纳电子学与神经形态芯片的新进展  

New Progress of Nanoelectronics and Neuromorphic Chips

作　　者：赵正平[1,2] Zhao Zhengping(China Electronics Technology Group Corporation, Beijing 100846, China;Science and Technology on ASIC Laboratory, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司 [2]专用集成电路重点实验室

出　　处：《微纳电子技术》2018年第1期1-5,共5页Micronanoelectronic Technology

摘　　要：综述了纳电子学和神经形态芯片进入新世纪后所处发展阶段以及近两年的最新进展。在纳电子领域,综述并分析了当今集成电路的发展现状,包括鳍式场效应晶体管（Fin FET）的发展、10 nm节点的技术突破、7 nm和5 nm节点的前瞻性技术研究以及三类后互补金属氧化物半导体（CMOS）器件（自旋电子器件、隧穿FET和碳纳米管栅的二维半导体Mo S2晶体管）的探索性研究,指出摩尔定律将沿着加强栅对沟道电子的控制（三栅和环栅）、更换高迁移率材料和采用新机理等技术路线继续前行。在神经形态芯片领域,综述并分析了神经形态芯片的发展历程、＂真北＂类脑芯片的技术创新和应用、当今嵌入式神经处理器的四个发展特点和采用新器件提高能量效率的探索。采用纳电子技术的神经形态芯片的发展将成为未来智能时代发展的基础。The development phase of nanoelectronics and neuromorphic chips after entering the new century and the latest developments in the past two years are reviewed. In the field of the nanoelectronics,the development status of the integrated circuits today is reviewed and analyzed,including the developments of Fin field-effect transistors（ Fin FETs）,the technology breakthrough in 10 nm node,the forward-looking technology research in 7 nm node and 5 nm node,the exploratory studies of three types of beyond complementary metal-oxide-semiconductor transistor（ CMOS） devices（ spin electronics devices,tunneling FETs and carbon nanotubes gate/two-dimensional Mo S2 semiconductor transistors）. It point out that Moore’s law will keep on moving with the technical route of strengthening the gate control for the channel electrons（3-gate and ring gate）,using high mobility materials,adopting new mechanism and so on. In the field of neuromorphic chips,the developing courses of neuromorphic chips,the technology innovation and application of ＂ true north＂ brain chips,the four development characteristics of current embedded nerve processors and the exploration of the energy efficiency improved by adoption of new devices are reviewed and analyzed. The development of neuromorphic chips using nanoelectronic technology will be a foundation of future intelligent era development.

关 键 词：纳电子学 鳍式场效应晶体管(FinFET) 10 nm互补金属氧化物半导体(CMOS) 纳米线晶体管 自旋电子学 碳纳米管栅 神经形态芯片 类脑芯片 神经形态处理器 忆阻器 

分 类 号：TN3[电子电信—物理电子学] TN4