高Q值表面等离子体传感器研究  

Study on high Q surface plasmon sensor

作　　者：孙青云[1,2] 朱亦鸣 陈麟[1,2] 

机构地区：[1]上海理工大学上海市现代光学系统重点实验室,上海200093 [2]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《光学仪器》2017年第6期51-55,共5页Optical Instruments

摘　　要：设计了高Q值表面等离子体传感器,传感器芯片的基底为200μm厚的石英材料,上层为复合结构金属层。为保证高效传输,它的等离子体波导由共面波导结构(coplanar waveguide,CPW)过渡引出,经由表面等离子体传输线传输至谐振环,从而共振模式可以由等离子体波导和谐振环的相互耦合共振产生。通过仿真,对不同模式下的电场分布图对应谐振环的闭合状态进行研究,在传输系数S21图上得到6个明显的谐振谷,其中有3个谷的Q值十分高,这6个谐振谷的Q值范围为44.6~268.3。In this paper,a high Qsurface plasmon sensor is designed.The substrate of this sensor chip is 200μm thick quartz material,and the upper layer is a composite metal layer.In order to ensure the efficient transmission,its plasma waveguide consists of coplanar waveguide(CPW)structure transition leads,via surface plasmon transmission to the resonant ring.Thus,resonance modes can be generated by aplasma waveguide coupling resonant ring.In this paper,the closed state of the corresponding resonant ring is explained theoretically by the simulation of the electrical field distribution under different modes.On the transmission coefficient S21 diagram,six distinct resonance valleys can be observed,of which three valleys have very high Qvalues,and the Qvalues of the six resonance valleys range from 44.6 to 268.3.

关 键 词：等离子体波导 谐振环 传感器 

分 类 号：TN29[电子电信—物理电子学]