集成电路用钛靶材和铜铬合金背板扩散焊接技术研究  

Study on diffusion bonding technology of Ti target and CuCr alloy backplane for integrated circuit(IC)

作　　者：董亭义 户赫龙 于文军 何金江 吕保国 DONG Ting-yi;HU He-long;YU Wen-jun;HE Jin-jiang;Lü Bao-guo(Bejing Trillion Metals Co. Ltd., Beijing 100088, China;GRIKIN Advanced Materials Co. Ltd., Beijing 102200, China;The High Purity Metal Sputtering Target Engineering Technology Research Center in Beijing, Beijing 102200, China)

机构地区：[1]北京翠铂林有色金属技术开发中心有限公司,北京100088 [2]有研亿金新材料有限公司,北京102200 [3]北京市高纯金属溅射靶材工程技术研究中心,北京102200

出　　处：《金属功能材料》2017年第6期23-27,共5页Metallic Functional Materials

基　　金：国家02科技重大专项课题(2014ZX02501-009-007)

摘　　要：研究了高纯金属Ti和CuCr合金在不同的工艺条件下的扩散焊接性能和界面情况。结果表明,真空封焊的退火态CuCr合金和高纯Ti样件经过525℃/120 MPa/4h的热等静压,平均焊接强度能达到133.6 MPa以上,焊接界面达到冶金结合,焊接可以满足Ti靶材的使用要求。The diffusion bonding properties and interface of high-purity Ti and CuCr alloys were studied under different conditions.The results show that the vacuum-sealing sample with high pure Ti and annealed CuCr alloy was put on 525 ℃/120 MPa hot isostatic pressing furnace for 4 h,the average welding strength of sample can reach more than 133.6 MPa,the welding interface of sample achieves metallurgical bonding,the diffusion bonding property of sample can meet the requirements of Ti target.

关 键 词：靶材 高纯钛 扩散焊接 CUCR合金 

分 类 号：TG453.9[金属学及工艺—焊接]