976 nm锥形半导体激光器结构设计与优化  

Design and optimization of 976 nm tapered semiconductor laser

作　　者：孙胜明 范杰 徐莉 邹永刚 马晓辉 陈琦鹤 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《红外与激光工程》2017年第12期32-37,共6页Infrared and Laser Engineering

基　　金：国家自然科学基金青年科学基金(201707010);长春理工大学青年科学基金(XQNJJ-2015-10);长春理工大学科技创新基金(XJJLG-2016-07)

摘　　要：锥形半导体激光器具有高亮度、高光束质量等特点。通过借助数值模拟仿真软件Lastip,优化设计了976 nm锥形半导体激光器结构。在低光限制因子Г条件下,确定了In Ga As/Al Ga As量子阱厚度及非对称波导厚度比值关键参数,并分析了主振荡器的注入光功率和耦合进锥形区的基侧模衍射分布特性。研究结果表明:与传统的单量子阱器件结构相比,当光限制因子Г相同均为2%时,在工作电流为3 A条件下,优化设计的非对称双量子阱结构主振荡器的基侧模分布更为集中。其注入光功率由2.76 W提升至3.67 W,同时耦合进锥形区的基侧模衍射分布更为均匀,并具有稳定的电光转换效率。Tapered semiconductor lasers are characterized by high brightness and high beam quality. With the help of the numerical simulation software Lastip, the structure of 976 nm tapered semiconductor laser was optimized. In the condition of low confinement factor Г, the InGaAs/AlGaAs quantum wells thickness and the asymmetric waveguide thickness ratio were determined. The inject power of master oscillator （MO） and the diffraction distribution characteristics of the fundamental lateral mode coupled tapered section were analyzed. The results show that, when the operating current is 3 A and the optical confinement factors are 2%, the simulation shows the fundamental lateral mode of the optimized design has more concentrated distribution compared with the conventional 2.67 W of the single quantum well （SQW） structure. The injected optical power was increased from 2.76 W to 3.67 W. And, the diffraction distribution of the fundamental lateral mode coupled into the tapered section was more uniform, the conversion efficiency of MO of optimized structure was more stable.

关 键 词：锥形激光器 双量子阱 基侧模 注入光功率 衍射分布 

分 类 号：TN248.4[电子电信—物理电子学]