忆阻值的影响参数分析  

Analysis on influence parameter of memristance

作　　者：苏大体 孙岩洲[1] 杨慧彬 

机构地区：[1]河南理工大学电气工程与自动化学院,河南焦作454000

出　　处：《传感器与微系统》2017年第12期43-45,49,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学及河南人才培养联合基金资助项目(U1204506)

摘　　要：为了分析参数对忆阻器忆阻值的影响,通过搭建忆阻器的Matlab仿真模型,运用控制变量法,分别设置外加激励幅值为1,2 V,电压频率为1,2 Hz,忆阻器横截面积为10,25μm^2,忆阻器长度为10,20 nm,对不同条件不同参数的忆阻器模型进行了大量仿真分析。计算各伏安特性曲线和忆阻值的具体变化范围,通过对仿真数据的统一比较分析得出了不同情况下忆阻值的变化规律。In order to analyze on influence of parameters on memristor,by building Matlab simulation model for memristor,by using control variable method,separately set extrinsic motivation voltage amplitude to 1 V and 2 V;voltage frequency is 1 Hz and 2 Hz; cross section area of the memristor is 10 μm^2 and 25 μm^2; length of the memristor is 10 nm and 20 nm,a lot of simulation and analysis are carried out on the model of the memristor under different conditions and parameters. Calculate volt-ampere characteristic curves of memristor and specific variation range of memristance,and by comparing and analyzing on simulation data,changing rules of the memristance under different conditions is obtained.

关 键 词：忆阻器 控制变量 伏安特性 变化规律 

分 类 号：TN601[电子电信—电路与系统]