金属掺杂对Y_2O_3-Gd_2O_3-HfO_2浸渍W基阴极次级电子发射的影响  

Effect of Re(W)-Doping on Secondary Electron Emission of Y_2O_3-Gd_2O_3-HfO_2 Impregnated W-Based Directly-Heated Cathode

作　　者：蒋鹏宇 王小霞[1] 罗积润[1] 赵青兰[1] 李云[1] 

机构地区：[1]中国科学院电子学研究所高功率微波源与技术重点实验室,北京100190 [2]中国科学院大学,北京100049

出　　处：《真空科学与技术学报》2017年第12期1212-1216,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(No.61771454)

摘　　要：Y_2O_3-Gd_2O_3-HfO_2浸渍W基直热式阴极具有热发射电流密度大、工作温度低的特点,是一种用于大功率连续波磁控管的直热式阴极。本文主要研究了金属Re、W的掺杂对Y_2O_3-Gd_2O_3-HfO_2浸渍W基直热式阴极次级电子发射系数的影响。通过测试表明Y_2O_3-Gd_2O_3-HfO_2浸渍W基直热式阴极的次级电子发射系数(δm)为2.64,活性物质分别掺杂20%(质量比)和30%的Re粉和W粉后,阴极的最大次级电子发射系数(δm)都得到了提升,而且掺杂W粉的效果要优于掺杂Re粉。Herein,we reported the surface modification with Re and/or W-doping of the directlyheated,impregnated with Y_2O_3-Gd_2O_3-HfO_2 oxides,W-basedcathode,dedicated to the high-power continuous wave magnetron tube and being capable of emitting a high thermal current density at a low temperature. The effect of the Re and/or W contents on the secondary electron emission（SEE） coefficient was experimentally investigated. The results show that depending on the content,the Re-and/or W-doping significantly increasedthe maximum secondary electron emission coefficient（δm） of the cathode. To be specific,Re-20% and/or W-30% wt increased the maximum secondary electron emission coefficient,δm,（measured to be2. 64） of the cathode,respectively. In addition,when it comes to enhancement of SEE coefficient,W-doping outperforms Re-doping.

关 键 词：直热式阴极 次级电子发射(SEE) 大功率连续波磁控管 金属掺杂 

分 类 号：TN123[电子电信—物理电子学]